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this is information on a product in full production. april 2014 docid026265 rev 1 1/17 STH160N4LF6-2 n-channel 40 v, 0.0018 m ? typ., 120 a, stripfet? vi deepgate? power mosfet in a h2pak-2 package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? logic level drive ? high avalanche ruggedness ? 100% avalanche tested applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. $0y '7$% * 6 1 2 3 tab h 2 pak-2 order code v ds r ds(on) max i d p tot STH160N4LF6-2 40 v 0.0022 ? 120 a 150 w table 1. device summary order code marking package packaging STH160N4LF6-2 160n4lf6 h 2 pak-2 tape and reel www.st.com
contents STH160N4LF6-2 2/17 docid026265 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid026265 rev 1 3/17 STH160N4LF6-2 electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 40 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 120 a i d drain current (continuous) at t c = 100 c 100 a i dm (1) 1. pulse width is limited by safe operating area drain current (pulsed) 480 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c i as avalanche current, repetitive or not-repetitive (pulse width limited by t jmax ) 60 a e as single pulse avalanche energy 323 mj t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max 1.0 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STH160N4LF6-2 4/17 docid026265 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a40-v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v - 1 a v ds = 20 v, tc = 125 c 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v - 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a1 - v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 60 a 0.0018 0.0022 ? v gs = 5 v, i d = 60 a 0.002 0.0027 ? table 5. dynamic symbol parameter test conditions min typ. max. unit c iss input capacitance v ds = 20 v, f=1 mhz, v gs = 0 v - 8130 - pf c oss output capacitance - 770 - pf c rss reverse transfer capacitance -670-pf q g total gate charge v dd = 20 v, i d = 60 a v gs = 10 v (see figure 14 ) -181-nc q gs gate-source charge - 22 - nc q gd gate-drain charge - 46 - nc table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 20 v, i d = 60 a, r g = 4.7 ? , v gs = 10 v (see figure 15 ) -20-ns t r rise time - 131 - ns t d(off) turn-off delay time - 205 - ns t f fall time - 116 - ns
docid026265 rev 1 5/17 STH160N4LF6-2 electrical characteristics 17 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 120 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 480 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 120 a, v gs = 0 - 0.97 v t rr reverse recovery time i sd = 120 a, di/dt = 100 a/ s, v dd = 32 v (see figure 17 ) -57 ns q rr reverse recovery charge - 53 nc i rrm reverse recovery current - 1.86 a
electrical characteristics STH160N4LF6-2 6/17 docid026265 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100 s 1ms 10 m s tj=175c tc = 2 5 c single pulse 100 am15854v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 150 100 50 0 0 0.4 v ds (v) (a) 0.2 200 v gs = 3 v v gs = 6, 7, 8, 9, 10 v 250 v gs = 4 v v gs = 5 v 0.6 0.8 am15797v1 i d 150 100 50 0 0 2 v gs (v) 4 (a) 200 6 v ds = 0.6v 8 250 am15798v1 v gs 6 4 2 0 0 50 q g (nc) (v) 8 100 150 10 v dd =20v 200 12 i d =60v am15799v1 r ds(on) 1.60 1.55 1.50 30 i d (a) (m ) 10 50 1.65 1.70 20 40 60 v gs =10v 1.75 1.80 am15800v1
docid026265 rev 1 7/17 STH160N4LF6-2 electrical characteristics 17 figure 8. capacitance variations figure 9. normalized v (br)dss vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics c 10000 1000 100 0 16 v ds (v) (pf) 8 24 ciss coss crss 32 am15801v1 v (br)dss -75 -25 t j (c) (norm) 25 75 0.92 0.94 0.96 1.02 1.04 1.06 125 0.98 1 1.08 1.1 i d =250 a am15802v1 v gs(th) 0.6 0.4 0.2 0 -75 -25 t j (c) (norm) 0.8 25 75 125 i d =250 a 1 1.2 am15803v1 r ds(on) 1 0.5 0 -75 -25 t j (c) 1.5 v gs =10v 25 75 2 (norm) 125 am15804v1 v sd 0 40 i sd (a) (v) 20 60 0.5 0.55 0.6 0.65 0.7 0.75 t j =-55c t j =150c t j =25c 80 0.8 0.9 0.85 am15805v1
test circuits STH160N4LF6-2 8/17 docid026265 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026265 rev 1 9/17 STH160N4LF6-2 test circuits 17 figure 19. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd
package mechanical data STH160N4LF6-2 10/17 docid026265 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026265 rev 1 11/17 STH160N4LF6-2 package mechanical data 17 figure 20. h2pak-2 drawing 8159712_c
package mechanical data STH160N4LF6-2 12/17 docid026265 rev 1 table 8. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
docid026265 rev 1 13/17 STH160N4LF6-2 package mechanical data 17 figure 21. h2pak-2 recommended footprint (dimensions are in mm) 8159712_c
packaging mechanical data STH160N4LF6-2 14/17 docid026265 rev 1 5 packaging mechanical data figure 22. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2
docid026265 rev 1 15/17 STH160N4LF6-2 packaging mechanical data 17 figure 23. reel table 9. h2pak-2 leads tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STH160N4LF6-2 16/17 docid026265 rev 1 6 revision history table 10. document revision history date revision changes 24-apr-2014 1 first release.
docid026265 rev 1 17/17 STH160N4LF6-2 17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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